Filtronic
.5-8GHz MESFET Amplifier
Solid State
LMA110B
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Features
3.5dB Typical Noise Figure
12.5dB Typical Gain
12dBm Saturated Output Power
12dB
Input/Output Return Loss Typical
0.5-6GHz Frequency Bandwidth
+8 Volts Single Bias Supply
DC Decoupled RF Input and Output
Chip Size : 1.62
mm
X1.62
mm
(.064"X.064")
Chip Thickness : 100
m
Pad Dimension : 100
m
2
Description
The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz. This amplifier produces a typical gain of
12.5dB with a noise figure of 3.5dB. The LMA110B is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC
decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications at T
a
=25
C
(V
DD
=+8.0V, Zin=Zout=50
)
Absolute Maximum Ratings
Notes
:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
DSS 005 WD
Limit
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BW
Operating Bandwidth
0.5
8
GHz
S21
Small Signal Gain
V
D
=8V, Vg1=Vg2=8V
11
12.5
dB
Ids
Drain Operating Current
60
85
110
mA
S21
Small Signal Gain Flatness
1
1.5
dB
NF
Noise Figure
@ 50% Idss
3.5
4.5
dB
RLin
Input Return Loss
-10
-8
dB
RLout
Output Return Loss
-10
-8
dB
S12
Reverse Isolation
-30
dB
P-1dB
1-dB Gain Compression Power
8
10
dBm
Symbol
Parameter/Conditions
Min.
Max.
Units
Vdd
Drain Supply Voltage
13
Volts
Idd
Total Drain Current
110
mA
Pin
RF Input Power
24
dBm
Pt
Power Dissipation
1.5
W
Tch
Operating Channel Temperature
150
C
Tstg
Storage Temperature
-65
165
C
Tmax.
Max. Assembly Temp.
(1 min. max.)
300
C
Filtronic
.5-8GHz MESFET Amplifier
Solid State
LMA110B
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Assembly Diagram
SIMPLE BIAS SCHEME
Notes:
1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond
tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended.
Ultrasonic bonding is not recommended.
2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
3.) Bond on bond or stitch bond acceptable.
4.) Conductor over conductor acceptable. Conductors must not short.
DSS 005 WD
Filtronic
.5-8GHz MESFET Amplifier
Solid State
LMA110B
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Assembly Diagram
OPTIMUM BIAS SCHEME
Notes:
1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond
tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended.
Ultrasonic bonding is not recommended.
2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
3.) Bond on bond or stitch bond acceptable.
4.) Conductor over conductor acceptable. Conductors must not short.
DSS 005 WD
Filtronic
.5-8GHz MESFET Amplifier
Solid State
LMA110B
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Mechanical Outline
Notes:
1.)Unless Otherwise specified.
2.) All units are in micron (m).
3.) All bond pads are 100 X 100 m
2
.
4.) Bias pad (V
DD
) size is 100 X 121.5 m
2
.
DSS 005 WD
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